Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders.
QM15KD-HB
I
C
Collector current .......................... 15A
V
CEX
Collector-emitter voltage ........... 600V
h
FE
DC current gain............................. 250
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
BuP BvP BwP
K
P
U
V
W
A
T
S
R
BuN BvN BwN
N
R6
11 11 11 12.5 10.5 10.5 18.5
2
5.5
9
30
42
18
18
18
15
8
93
110
(24.45)
6.5
15
(23.6)
LABEL
Tab#110, t=0.5
Tab#250, t=0.8
R
S
T
A
K P
BuP
U
BuN
BvP
V
BvN
BwP
W
BwN
N
Feb.1999
Min.
--
--
--
--
--
--
250
--
--
--
--
--
--
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=15A, I
B
=60mA
I
C
=15A (diode forward voltage)
I
C
=15A, V
CE
=2V
V
CC
=300V, I
C
=15A, I
B1
=90mA,I
B2
=0.3A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Conditions
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
(Inverter part, T
j
=25
C)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
I
C
P
C
I
B
I
CSM
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
600
600
600
7
15
15
76
1
150
Unit
V
V
V
V
A
A
W
A
A
ABSOLUTE MAXIMUM RATINGS
(Converter part, T
j
=25
C)
Symbol
V
RRM
V
RSM
E
a
I
O
I
FSM
I
2t
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
2t
for fusing
Conditions
Three phase full wave rectifying circuit, T
c
=79
C
One half cycle at 60 Hz, peak value
Value for one cycle of surge current
Ratings
800
900
220
30
300
375
Unit
V
V
V
A
A
A
2
s
ABSOLUTE MAXIMUM RATINGS
(Common)
Symbol
T
j
T
stg
V
iso
--
--
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Ratings
40~150
40~125
2500
1.47~1.96
15~20
125
Unit
C
C
V
Nm
kgcm
g
Unit
mA
mA
mA
V
V
V
--
s
s
s
C/ W
C/ W
C/ W
Limits
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
1.0
1.0
40
2.0
2.5
1.5
--
1.5
10
2.0
1.65
2.8
0.35
ELECTRICAL CHARACTERISTICS
(Inverter part, T
j
=25
C)
Parameter
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
Contact thermal resistance
Test conditions
V
R
=V
RRM
, T
j
=150
C
I
F
=30A
Junction to case
Case to fin, conductive grease applied
ELECTRICAL CHARACTERISTICS
(Converter part, T
j
=25
C)
Symbol
I
RRM
V
FM
R
th (j-c)
R
th (c-f)
Unit
mA
V
C/ W
C/ W
Limits
Max.
5.0
1.3
0.9
0.35
Min.
--
--
--
--
Typ.
--
--
--
--
Feb.1999
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT
I
C
(A)
DC CURRENT GAIN
h
FE
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
BASE CURRENT
I
B
(A)
COLLECTOR-EMITTER SA
TURA
TION
VOL
T
AGE
V
CE
(sat)
(V)
SA
TURA
TION VOL
T
AGE
V
CE (sat)
, V
BE (sat)
(V)
SWITCHING TIME
t
on
, t
s
, t
f
(
s)
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
3
10
2
10
1
10
0
10
0
10
1
10
7
5
4
3
2
2
10
7
5
4
3
2
1.2
1.6
2.0
2.4
2.8
3.2
V
CE
=2.0V
T
j
=25C
50
40
30
20
10
0
0
1
2
3
4
5
T
j
=25C
I
B
=200mA
I
B
=60mA
I
B
=40mA
I
B
=20mA
I
B
=0.6A
3
10
7
5
4
3
2
2
10
7
5
4
3
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
2
3
V
CE
=2.0V
V
CE
=5.0V
T
j
=25C
T
j
=125C
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25C
T
j
=125C
I
B
=60mA
V
BE(sat)
V
CE(sat)
7
5
3
2
7
5
3
2
7
5
3
2
5
4
3
2
1
0
T
j
=25C
T
j
=125C
I
C
=10A
I
C
=15A
I
C
=5A
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25C
T
j
=125C
I
B2
=300mA
I
B1
=90mA
V
CC
=300V
t
on
t
f
t
s
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME
t
s
, t
f
(
s)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
V
CEO
(V)
TIME (s)
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
DERA
TING F
ACTOR (%)
COLLECTOR REVERSE CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
th (jc)
(
C/ W)
0
10
1
10
0
10
1
10
2
10
3
10
2
10
1
10
0
10
3
10
2
10
0
10
1
10
1
10
2
10
1
10
100
80
60
40
20
0
0
20
60
100 120
160
40
80
140
10
30
50
70
90
0
10
2
10
7
5
4
3
2
1
10
7
5
4
3
2
2 3 4 5 7
2 3 4 5 7
0
10
t
s
T
j
=25C
T
j
=125C
I
C
=15A
I
B1
=90mA
V
CC
=300V
t
f
0
0
200
400
800
100
300
20
500 600 700
8
4
12
16
24
28
32
T
j
=125C
I
B2
=3.0A
I
B2
=0.5A
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
500s
1ms
DC
100s
t
w
=10ms
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0.4
0.8
1.2
1.6
2.0
2.4
T
j
=25C
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
1.0
1.2
1.4
1.6
2.0
0
7
5
3
2
0.8
1.8
T
C
=25C
NON-REPETITIVE
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
Feb.1999
I
rr
(A), Q
rr
(
c)
SURGE COLLECTOR REVERSE CURRENT
I
CSM
(A)
t
rr
(
s)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
Z
th (jc)
(
C/ W)
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
1
10
2
10
3
10
0
10
1
10
0
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
40
80
120
160
200
60
100
140
180
20
1
10
7
5
4
3
2
0
10
7
5
4
3
2
1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
1
10
0
10
1
10
T
j
=25C
T
j
=125C
I
B2
=300mA
I
B1
=90mA
V
CC
=300V
I
rr
Q
rr
t
rr
7
5
3
2
7
5
3
2
7
5
3
2
2.0
0
7
5
3
2
0.4
0.8
1.2
1.6
2.4
2.8
3.2
Feb.1999
3
10
2
10
1
10
0
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
100
200
300
400
500
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.2
1.6
2.0
2.4
T
j
=25C
100
80
60
40
20
0
0
8
16
24
32
40
160
140
120
100
80
60
0
8
16
24
32
40
RESISTIVE, INDUCTIVE LOAD
RESISTIVE, INDUCTIVE LOAD
POWER DISSIP
A
TION
P (W)
MAXIMUM POWER DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. DC OUTPUT CURRENT
DC OUTPUT CURRENT
I
O
(A)
DC OUTPUT CURRENT
I
O
(A)
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
FOR
W
ARD CURRENT
I
F
(A)
FORWARD VOLTAGE DROP
V
F
(V)
PERFORMANCE CURVES (Diode parts)
SURGE (NON-REPETITIVE) FORW
ARD
CURRENT
I
FSM
(A)
ALLOWABLE SURGE (NON-REPETITIVE)
FORWARD CURRENT
CONDUCTION TIME (CYCLES AT 60H
Z
)
CASE TEMPERA
TURE
T
C (
C)
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